ar c hive inf o rmati o n archive information mrf19045lr3 mrf19045lsr3 1 rf device data freescale semiconductor rf power field effect transistors n - channel enhancement - mode lateral mosfets designed for pcn and pcs base station applications with frequencies from 1900 to 2000 mhz. suitable for tdma , cdma and multicarrier amplifier applications. ? typical cdma performance @ 1930 mhz, 26 volts, i dq = 550 ma multi - carrier is - 95 cdma pilot, sync, paging, traffic codes 8 through 13 output power ? 9.5 watts avg. power gain ? 14.9 db efficiency ? 23.5% adjacent channel power ? 885 khz: - 50 dbc @ 30 khz bw im3 ? - 37 dbc ? capable of handling 5:1 vswr, @ 26 vdc, 1960 mhz, 45 watts cw output power features ? internally matched for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? excellent thermal stability ? characterized with series equivalent large - signal impedance parameters ? low gold plating thickness on leads, 40 ? nominal. ? rohs compliant ? in tape and reel. r3 suffix = 250 units per 32 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain - source voltage v dss - 0.5, +65 vdc gate - source voltage v gs - 0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 105 0.60 w w/ c storage temperature range t stg - 65 to +150 c case operating temperature t c 150 c operating junction temperature t j 200 c table 2. thermal characteristics characteristic symbol value (1) unit thermal resistance, junction to case r jc 1.65 c/w table 3. esd protection characteristics test conditions class human body model 2 (minimum) machine model m3 (minimum) 1. refer to an1955/d, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. document number: mrf19045 rev. 9, 10/2008 freescale semiconductor technical data mrf19045lr3 mrf19045lsr3 1930 - 1990 mhz, 45 w, 26 v lateral n - channel rf power mosfets case 465e - 04, style 1 ni - 400 mrf19045lr3 case 465f - 04, style 1 ni - 400s mrf19045lsr3 ? freescale semiconductor, inc., 2008. all rights reserved.
ar c hive inf o rmati o n archive information 2 rf device data freescale semiconductor mrf19045lr3 mrf19045lsr3 table 4. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain - source breakdown voltage (v gs = 0 vdc, i d = 100 adc) v (br)dss 65 ? ? vdc zero gate voltage drain current (v ds = 26 vdc, v gs = 0 vdc) i dss ? ? 10 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics (dc) gate threshold voltage (v ds = 10 vdc, i d = 100 adc) v gs(th) 2 ? 4 vdc gate quiescent voltage (v ds = 26 vdc, i d = 550 madc) v gs(q) 3 3.8 5 vdc drain - source on - voltage (v gs = 10 vdc, i d = 1 adc) v ds(on) ? 0.19 0.21 vdc forward transconductance (v ds = 10 vdc, i d = 2 adc) g fs ? 4.2 ? s dynamic characteristics reverse transfer capacitance (1) (v ds = 26 vdc, v gs = 0, f = 1.0 mhz) c rss ? 1.8 ? pf functional tests (in freescale test fixture, 50 ohm system) 2 - carrier n - cdma, 1.2288 mhz channel bandwidth, im3 measured in 1.2288 mhz integrated bandwidth. acpr measured in 30 khz integrated bandwidth. common - source amplifier power gain (v dd = 26 vdc, p out = 9.5 w avg, 2 - carrier n - cdma, i dq = 550 ma, f1 = 1930 mhz, f2 = 1932.5 mhz) g ps 13 14.5 ? db drain efficiency (v dd = 26 vdc, p out = 9.5 w avg, 2 - carrier n - cdma, i dq = 550 ma, f1 = 1930 mhz, f2 = 1932.5 mhz) 21 23.5 ? % 3rd order intermodulation distortion (v dd = 26 vdc, p out = 9.5 w avg, 2 - carrier n - cdma, i dq = 550 ma, f1 = 1930 mhz, f2 = 1932.5 mhz; im3 measured in a 1.2288 mhz integrated bandwidth centered at f1 - 2.5 mhz and f2 +2.5 mhz, referenced to the carrier channel power) im3 ? -37 -35 dbc adjacent channel power ratio (v dd = 26 vdc, p out = 9.5 w avg, 2-carrier n-cdma, i dq = 550 ma, f1 = 1930 mhz, f2 = 1932.5 mhz; acpr measured in a 30 khz integrated bandwith centered at f1 - 885 khz and f2 +885 khz) acpr ? -51 -45 dbc input return loss (v dd = 26 vdc, p out = 9.5 w avg, 2 - carrier n - cdma, i dq = 550 ma, f1 = 1930 mhz, f2 = 1932.5 mhz) irl ? -16 -9 db p out , 1 db compression point (v dd = 26 vdc, i dq = 550 ma, f = 1930 mhz) p1db ? 45 ? w 1. part is internally matched both on input and output.
ar c hive inf o rmati o n archive information mrf19045lr3 mrf19045lsr3 3 rf device data freescale semiconductor figure 1. 1930 - 1990 mhz 2-carrier n-cdma test circuit schematic rf output z3 z4 c6 c1 r1 c3 + c7 c5 c8 c2 z6 z7 v supply c12 c10 z11 c9 z8 c11 + z8 0.216 x 0.047 microstrip z9 0.519 x 0.254 microstrip z10 0.874 x 0.081 microstrip z11 0.645 x 0.081 microstrip pcb arlon gx0300-55-22, 30 mils, r = 2.55 z1 1.336 x 0.081 microstrip z2 0.693 x 0.081 microstrip z3 1.033 x 0.047 microstrip z4 0.468 x 0.047 microstrip z5 0.271 x 0.460 microstrip z6 0.263 x 0.930 microstrip z7 1.165 x 0.047 microstrip note: z3, z4, z7, z8 lengths and component placement tolerances are 0.050 . zx lengths are microstrip lengths between components, center-line to center-line. all component and z-length tolerances are 0.015 , except as noted. ++ v bias rf input z1 z2 z5 w2 r4 + z9 z10 c13 b2 r5 b2 w1 r3 b1 r2 c4 table 5. 1930 - 1990 mhz 2-carrier n-cdma test circuit component designations and values designators description b1, b2 0.120 x 0.333 x 0.100 , surface mount ferrite beads, fair rite #2743019446 c1, c2 10 f, 35 v tantalum surface mount chip capacitors, kemet #t495x106k035as4394 c3, c11 0.1 f chip capacitors, kemet #cdr33bx104akws c4, c8 24 pf chip capacitors, atc #100b240jp500x c5 470 pf chip capacitor, atc #100b471jp200x c6, c7 11 pf chip capacitors, atc #100b110jp500x c9, c10, c12 22 f, 35 v tantalum surface mount chip capacitors, kemet #t491x226k035as4394 c13 8.2 pf chip capacitor, atc #100b8r2cp500x r1 560 k , 1/4 w chip resistor (0.08 x 0.13 ) r2, r3, r4, r5 8.2 , 1/4 w chip resistors (0.08 x 0.13 ), garrett instruments #rm73b2b110jt w1, w2 solid copper buss wire, 16 awg ws1, ws2 beryllium copper wear blocks (0.005 x 0.150 x 0.350 ) nominal
ar c hive inf o rmati o n archive information 4 rf device data freescale semiconductor mrf19045lr3 mrf19045lsr3 figure 2. 1930 - 1990 mhz 2-carrier n-cdma test circuit component layout c1 c13 c12 w1 ws1 w2 b1 r1 r2 r3 r4 r5 b2 c2 c3 c4 c5 c6 c7 c8 c9 c10 mrf19045/s rev - 0 c11 ws2 freescale has begun the transition of marking printed ci rcuit boards (pcbs) with the freescale semiconductor signature/logo. pcbs may have either motorola or freescale markings during the transition period. these changes will have no impact on form, fit or function of the current product.
ar c hive inf o rmati o n archive information mrf19045lr3 mrf19045lsr3 5 rf device data freescale semiconductor typical characteristics 5 10 15 20 25 30 35 1900 1930 1960 1990 2020 ?60 ?50 ?40 ?30 ?20 ?10 0 figure 3. 2-carrier n - cdma acpr, im3, power gain and drain efficiency versus output power figure 4. 2-carrier n-cdma acpr, im3, power gain, irl and drain efficiency versus output power figure 5. 2-carrier n-cdma im3 versus output power p out , output power (watts) (avg. 2?carrier n?cdma) figure 6. 2-carrier n-cdma acpr versus output power 13.5 acpr, adjacent channel power ratio (dbc) g ps , power gain (db) im3, third order intermodulation distortion (dbc) , drain efficiency (%), g ps , power gain (db) p out , output power (watts) (avg. 2?carrier n?cdma) im3 (dbc), acpr (dbc) 0 5 10 15 20 25 30 35 40 123456789101112 ?70 ?65 ?60 ?55 ?50 ?45 ?40 ?35 ?30 g ps acpr im3 g ps acpr im3 irl f, frequency (mhz) im3 (dbc), acpr (dbc), irl (db) , drain efficiency (%), g ps , power gain (db) ?55 ?50 ?45 ?40 ?35 ?30 01 9101112 350 ma 450 ma 700 ma 550 ma v dd = 26 vdc i dq = 550 ma f1 = 1960 mhz, f2 = 1962.5 mhz 234 5678 p out , output power (watts) (avg. 2?carrier n?cdma) 01 9101112 234 5678 ?70 ?55 ?65 ?60 ?50 ?45 figure 7. 2-carrier n-cdma power gain versus output power p out , output power (watts) (avg. 2?carrier n?cdma) 350 ma 450 ma 700 ma 550 ma 01 9101112 234 5678 350 ma 450 ma 700 ma 550 ma 14.0 14.5 15.0 15.5 v dd = 26 vdc i dq = 450 ma f1 = 1960 mhz, f2 = 1960.1 mhz 1.2288 mhz source channel bandwidth, 9 ch fwd carrier (9.8 db peak/avg. ratio @ 0.01%) v dd = 26 vdc, i dq = 550 ma 2.5 mhz carrier spacing 9 ch fwd carrier (9.8 db peak/avg. ratio @ 0.01%) 1.2288 mhz source channel bandwidth v dd = 26 vdc i dq = 550 ma f1 = 1960 mhz, f2 = 1962.5 mhz 1.2288 mhz source channel bandwidth, 9 ch fwd carrier (9.8 db peak/avg. ratio @ 0.01% probability) (ccdf) v dd = 26 vdc, i dq = 550 ma f1 = 1960 mhz, f2 = 1962.5 mhz 1.2288 mhz source channel bandwidth, 9 ch fwd carrier (9.8 db peak/avg. ratio @ 0.01% probability) (ccdf) figure 8. cw output power, power gain and drain efficiency versus input power 0 10 20 30 40 50 60 70 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 10 11 12 13 14 15 16 17 g ps p out p 1db p 3db p in , input power (watts cw) , drain efficiency (%), p , output power (watts cw) out g ps , power gain (db) v dd = 26 vdc i dq = 550 ma f = 1960 mhz
ar c hive inf o rmati o n archive information 6 rf device data freescale semiconductor mrf19045lr3 mrf19045lsr3 typical characteristics figure 9. cw two-tone power gain, imd and drain efficiency versus output power figure 10. cw two-tone power gain, input return loss, imd and drain efficiency versus frequency figure 11. cw two-tone intermodulation distortion versus output power f, frequency (mhz) figure 12. cw two-tone power gain versus output power p out , output power (watts pep) figure 13. cw two-tone intermodulation distortion products versus output power p out , output power (watts pep) g ps , power gain (db) , drain efficiency (%), g ps , power gain (db) 0 5 10 15 20 25 30 35 40 0.1 1.0 10 100 ?65 ?60 ?55 ?50 ?45 ?40 ?35 ?30 ?25 5 10 15 20 25 30 35 40 1900 1930 1960 1990 2020 ?35 ?30 ?25 ?20 ?15 ?10 ?5 0 g ps irl imd ?70 ?65 ?60 ?55 ?50 ?45 ?40 ?35 ?30 ?25 0.1 1.0 10 100 13.0 13.5 14.0 14.5 15.0 15.5 16.0 0.1 1.0 10 100 ?90 ?80 ?70 ?60 ?50 ?40 ?30 ?20 0.1 1.0 10 100 p out , output power (watts pep) p out , output power (watts pep) , drain efficiency (%), g ps , power gain (db) imd, intermodulation distortion (dbc), irl (db) imd, intermodulation distortion (dbc) g ps imd 350 ma 450 ma 700 ma 550 ma v dd = 26 vdc i dq = 450 ma 100 khz tone spacing 350 ma 450 ma 700 ma 550 ma 3rd order 5th order 7th order v dd = 26 vdc i dq = 450 ma f1 = 1960 mhz, f2 = 1960.1 mhz v dd = 26 vdc f1 = 1960 mhz, f2 = 1960.1 mhz v dd = 26 vdc i dq = 450 ma f1 = 1960 mhz, f2 = 1960.1 mhz v dd = 26 vdc f1 = 1960 mhz, f2 = 1960.1 mhz imd, intermodulation distortion (dbc) imd, intermodulation distortion (dbc) f, frequency (mhz) ?100 0 figure 14. 2 - carrier n - cdma spectrum ?10 ?20 ?30 ?40 ?50 ?60 ?70 ?80 ?90 ?acpr in 30 khz integrated bw +acpr in 30 khz integrated bw ?im3 in 1.2288 mhz integrated bw +im3 in 1.2288 mhz integrated bw 1.2288 mhz channel bw 6 1.5 4.5 3 0 ?1.5 ?3 ?4.5 ?6 ?7.5 7.5 (db)
ar c hive inf o rmati o n archive information mrf19045lr3 mrf19045lsr3 7 rf device data freescale semiconductor figure 15. series equivalent source and load impedance f mhz z source z load 1930 1960 1990 15.52 - j16.5 11.11 - j13.01 14.24 - j14.44 4.52 - j1.86 3.85 - j1.04 3.44 - j0.69 v dd = 26 v, i dq = 550 ma, p out = 9.5 w avg. z o = 25 f = 1930 mhz f = 1930 mhz f = 1990 mhz f = 1990 mhz z source z load z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network
ar c hive inf o rmati o n archive information 8 rf device data freescale semiconductor mrf19045lr3 mrf19045lsr3 package dimensions mrf19045lr3 case 465e - 04 issue f ni - 400 notes: 1. controlling dimension: inch. 2. interpret dimensions and tolerances per asme y14.5m, 1994. 3. dimension h is measured 0.030 (0.762) away from package body. 4. information only: corner break (4x) to be .060 .005 (1.52 0.13) radius or .06 .005 (1.52 0.13) x 45 chamfer. style 1: pin 1. drain 2. gate 3. source seating plane 2x d n (lid) e r (lid) f 2x k a t c m b m bbb a m t h b b g a m a m ccc b m t m a m bbb b m t 1 2 3 2x q m (insulator) s (insulator) m a m ccc b m t m a m aaa b m t m a m aaa b m t dim a min max min max millimeters .795 .805 20.19 20.44 inches b .380 .390 9.65 9.9 c .125 .163 3.17 4.14 d .275 .285 6.98 7.24 e .035 .045 0.89 1.14 f .004 .006 0.10 0.15 g h .057 .067 1.45 1.7 k .092 .122 2.33 3.1 m .395 .405 10 10.3 n .395 .405 10 10.3 q .120 .130 3.05 3.3 r .395 .405 10 10.3 s .395 .405 10 10.3 aaa bbb ccc .600 bsc 15.24 bsc .005 bsc 0.127 bsc .010 bsc 0.254 bsc .015 bsc 0.381 bsc see note 4 case 465f - 04 issue e ni - 400s mrf19045lsr3 notes: 1. controlling dimension: inch. 2. interpret dimensions and tolerances per asme y14.5m?1994. 3. dimension h is measured 0.030 (0.762) away from package body. style 1: pin 1. drain 2. gate 3. source 1 seating plane 2 e f 2x k m a m bbb b m t a t c h b a dim a min max min max millimeters .395 .405 10.03 10.29 inches b .395 .405 10.03 10.29 c .125 .163 3.18 4.14 d .275 .285 6.98 7.24 e .035 .045 0.89 1.14 f .004 .006 0.10 0.15 h .057 .067 1.45 1.70 k .092 .122 2.34 3.10 m .395 .405 10.03 10.29 s .395 .405 10.03 10.29 aaa .005 ref 0.127 ref 2x d m a m ccc b m t bbb .010 ref 0.254 ref ccc .015 ref 0.38 ref n .395 .405 10.03 10.29 r .395 .405 10.03 10.29 m a m ccc b m t m a m aaa b m t n (lid) m (insulator) (flange) 3 b (flange) r (lid) s (insulator) m a m aaa b m t
ar c hive inf o rmati o n archive information mrf19045lr3 mrf19045lsr3 9 rf device data freescale semiconductor product documentation refer to the following documents to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices revision history the following table summarizes revisions to this document. revision date description 9 oct. 2008 ? modified data sheet to reflect rf test reduction described in product and process change notification number, pcn12779, p. 1, 2 ? data sheet archived. part no longer manufactured. ? added product documentation and revision history, p. 9
ar c hive inf o rmati o n archive information 10 rf device data freescale semiconductor mrf19045lr3 mrf19045lsr3 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2008. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800 - 441 - 2447 or +1 - 303 - 675 - 2140 fax: +1 - 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf19045 rev. 9, 10/2008
|
